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| FDN336P January 2005 FDN336P Single P-Channel 2.5V Specified PowerTrench(R) MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits and DC/DC conversion. Features * * * -1.3 A, -20 V. RDS(ON) = 0.20 @ VGS = -4.5 V RDS(ON) = 0.27 @ VGS = -2.5 V Low gate charge (3.6 nC typical) High performance trench technology for extremely low RDS(ON) * SuperSOT TM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint D D S G S SuperSOT -3 TM G TA=25oC unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation Parameter Ratings -20 8 (Note 1a) Units V V A W C -1.3 -10 0.5 0.46 -55 to +150 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 250 75 C/W C/W Package Marking and Ordering Information Device Marking 336 Device FDN336P Reel Size 7'' Tape width 8mm Quantity 3000 units (c)2005 Fairchild Semiconductor Corporation FDN306P Rev D Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25 oC VDS = -16 V, VGS = 0 V TJ = 55C IGSSF IGSSR VGS(th) Gate - Body Leakage, Forward Gate - Body Leakage, Reverse (Note 2) -20 -16 -1 -10 100 -100 V mV /o C A A nA nA BVDSS/TJ IDSS VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25 oC VGS = -4.5 V, ID = -1.3 A TJ =125C VGS = -2.5 V, I D = -1.1 A -0.4 -0.9 3 0.122 0.18 0.19 -5 4 ON CHARACTERISTICS Gate Threshold Voltage Gate Threshold Voltage Temp. Coefficient Static Drain-Source On-Resistance -1.5 V mV /oC VGS(th)/TJ RDS(ON) 0.2 0.32 0.27 ID(ON) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd IS VSD Note: On-State Drain Current Forward Transconductance VGS = -4.5 V, VDS = -5 V VDS = -4.5 V, ID = -2 A VDS = -10 V, VGS = 0 V, f = 1.0 MHz A S DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) 330 80 35 pF pF pF SWITCHING CHARACTERISTICS Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -5 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 6 7 12 16 5 15 22 26 12 5 ns ns ns ns nC nC nC VDS = -10 V, ID = - 2 A, VGS = -4.5 V 3.6 0.8 0.7 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.42 A (Note) -0.42 -0.7 -1.2 A V 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a. 250oC/W when mounted on a 0.02 in2 pad of 2oz Cu. b. 270oC/W when mounted on a 0.001 in2 pad of 2oz Cu. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. FDN336P Rev.D Typical Electrical Characteristics 10 - ID , DRAIN-SOURCE CURRENT (A) 2 -3.0V 6 R DS(on), NORMALIZED 8 VGS = -4.5V -3.5V DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1 0.8 VGS = -2.5 V -3.0V -3.5V -4.0V -4.5V -2.5V 4 2 -2.0V 0 0 1 2 3 4 5 -VDS , DRAIN-SOURCE VOLTAGE (V) 0 2 4 6 8 10 - I D , DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate 1.6 DRAIN-SOURCE ON-RESISTANCE 0.5 R DS(ON) , ON-RESISTANCE (OHM) I D = -1.3A 1.4 ID = -0.6A 0.4 VGS = -4.5V R DS(ON) , NORMALIZED 1.2 0.3 1 0.2 TA= 125C 0.1 0.8 25C 0 0 2 4 6 8 10 0.6 -50 -25 0 25 50 75 100 T , JUNCTION TEMPERATURE (C) J 125 150 - V GS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. - IS , REVERSE DRAIN CURRENT (A) 4 10 VDS = -5V - I D , DRAIN CURRENT (A) 3 VGS = 0V 1 TJ = -55C 25C 125C TJ = 125C 25C 2 0.1 -55C 1 0.01 0 0.5 1 1.5 2 2.5 -VGS , GATE TO SOURCE VOLTAGE (V) 0.001 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDN336P Rev.D Typical Electrical Characteristics (continued) 5 -VGS , GATE-SOURCE VOLTAGE (V) 700 I D = -1.3A 4 VDS = -5V -10V CAPACITANCE (pF) 400 C iss 3 -15V 200 2 100 Coss 40 1 f = 1 MHz VGS = 0 V 0.2 0.5 1 2 5 10 C rss 20 0 0 1 2 Q g , GATE CHARGE (nC) 3 4 0.1 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 30 10 -ID , DRAIN CURRENT (A) 3 1 0.3 0.1 0.03 0.01 0.2 N) S(O RD IT LIM 50 1m 10m s s POWER (W) 40 SINGLE PULSE R JA =270C/W TA = 25C 100 1s 10s DC 30 ms 20 V GS = -4.5V SINGLE PULSE R JA = 270C/W T A = 25C 0.5 1 3 5 10 10 30 0 0.0001 0.001 0.01 0.1 1 10 100 300 SINGLE PULSE TIME (SEC) -VDS , DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk) R JA (t) = r(t) * RJA R JA = 270 C/W t1 TJ - T A t2 = P * R JA (t) Duty Cycle, D = t1 /t2 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 100 300 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDN336P Rev.D TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM Across the board. Around the world.TM OPTOLOGIC OPTOPLANARTM The Power Franchise PACMANTM Programmable Active DroopTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 |
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